Product details

Origin:USA

Brand:ABB

Product ID: 3BHB013085R0001

product description 

ABB's IGCT MODULE (Integrated Gate commutated thyristor) is an advanced power semiconductor device, 

which has the characteristics of fast, efficient and reliable, and is widely used in high-voltage and 

high-current power systems and equipment.

IGCT integrates GCT chip, anti-parallel diode and gate drive circuit, combining the advantages of 

transistor and thyristor, with fast and stable turn-off capability and low on-state loss. It can replace 

the traditional thyristor and transistor to improve the performance and reliability of the power system.

ABB produces IGCT mainly in asymmetric type, reverse conduction type and reverse resistance type

 three types, involving the voltage series including 4.5kV, 5.5kV, 6.5kV and 10kV. These products are 

widely used in wind power, photovoltaic, smart grid, high voltage direct current transmission and other

 fields.

When using IGCT, it is necessary to pay attention to its working conditions and parameters, such as

 voltage, current, temperature, etc., to ensure its normal operation and long life. At the same time, it is 

also necessary to pay attention to its protection and heat dissipation measures to avoid overheating 

and damage.

In summary, ABB's IGCT is a high-performance, reliable power semiconductor device that improves the 

performance and reliability of power systems, reducing energy consumption and failure rates. Proper use

 and maintenance of IGCT can effectively extend its service life and reliability.