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5SHY3545L0006

  • Warranty: 365 days

    Quality: Original module

    Condition: New / Used

    Warehouse: Spot

    Delivery time: Shipped in 3 days after payment


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product description: 

model name:5SHY3545L0006 IGCT controller module 

In the current field of medium voltage and high power applications, the dominant power semiconductor devices are mainly thyristors, gate turn-off thyristors (GTO), and insulated gate bipolar transistor (IGBT), etc. These traditional power devices have some defects in practical aspects. The GTO consists of thousands of separate switch units on a single silicon chip. How do you present small on-state loss and reasonable off loss at CLP? However, due to the uneven switching, the GTO needs an additional buffer circuit to maintain operation. These buffer circuits occupy most of the volume of the whole equipment, which is the main reason for complex design, high cost and large loss.

On the contrary, the IGBT switch is uniform and does not require a buffer circuit, but the on-state loss is large, and when used in a medium-voltage circuit, the low-voltage IGBT must be used in series, which greatly increases the complexity and loss of the system, and also reduces the reliability of the system.
In the mid-1990s, ABB researchers greatly reduced the requirements of the GTO drive circuit by optimizing the GTO drive unit and the device housing design, and adopted technologies such as integrated gates, and realized the technological leap from GTO to HD-GTO. However, the on-state loss of HD-GTO is relatively large, and researchers have learned from various loss reduction technologies accumulated in the development of IGBT in the process of medium and high voltage. The structure of HD-GTO is optimized, and it is named IGCT, integrated gate commutated thyristor, together with its integrated hard drive gating unit. In summary, IGCT has both GTO on characteristics and IGBT switching characteristics, characterized by high current, high voltage, high switching frequency, high reliability, compact structure and low loss, the performance is significantly better than the current widely used GTO and IGBT devices.
IGCT is mainly composed of the main switching device GTC and its corresponding integrated gate drive unit. GTC is evolved from GTO, introducing buffer layer, anode transparent emitter and inverse conduction structure. The profile structure of its core device GTC is shown in Figure 1.
The traditional non-penetrating concept is to directly diffuse the anode over a thick N-base region. The electric field distribution is triangular when the non-through-PN junction is blocked, as shown in curve 1 in Figure 2. It can be seen from Figure 2 that the total blocking voltage of the device is the integral of the electric field along the thickness of the silicon wafer. Therefore, when the maximum electric field strength of the material is unchanged, the higher the blocking voltage required, the thicker the silicon wafer will be. This will cause the on-loss and switching loss of the device to increase correspondingly.

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ABB-GVC736CE101-3BHE039203R0101-5SXE12-0184-(1).png


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