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5SHX0660F0001 Power control and conversion module

  • Warranty: 365 days

    Quality: Original module

    Condition: New / Used

    Warehouse: Spot

    Delivery time: Shipped in 3 days after payment


    Mail: 3598571032@qq.com

    Phone/Wechat/Whatsapp:+86 15339539190

  • Details

Details: 5SHX0660F0002 Module for power control and conversion
5 shx0660f0001
The 5SHX0660F0002 thyristor is a type of module for power control and conversion, belonging to the IGCT (Integrated Gate commutated thyristor) series. This kind of thyristor combines the advantages of stable switching ability of transistor and low on-state loss of thyristor, so that it can exert the performance of thyristor in the on-stage, and show the characteristics of transistor in the off stage.
Specifically, the 5SHX0660F0002 thyristor integrates the GTO chip with an anti-parallel diode and a gate drive circuit, which is then connected to its gate driver in a low-inductance manner at the periphery. This design makes the thyristor have the characteristics of high efficiency, wide input range, high efficiency heat dissipation design and easy to use.
In practical applications, 5SHX0660F0002 thyristors can be used in a variety of industrial application scenarios that require high efficiency, reliability and programmability. Due to its efficient power control and conversion capabilities, it is often used in large power electronics packages developed by medium-voltage inverters to provide stable and reliable power support for industrial automation and control systems.
Overall, the 5SHX0660F0002 thyristor is a full-featured, stable power control and conversion module suitable for a variety of industrial applications. However, when using this thyristor, it is necessary to follow the relevant installation and use specifications to ensure its normal operation and extend its service life. At the same time, for specific application scenarios, it may be necessary to customize the design and configuration to meet the specific power control and conversion requirements.
IGCT (Integrated gate-commutated Thyristor) is an integrated gated thyristor, while IGBT (Insulated Gate Bipolar Transistor) is an insulated Gate dual-B transistor. They are both switching devices for high-power power electronics, but the two differ in structure and working principle.
The IGBT structure is composed of longitudinal, including N-channel MOSFET, P-channel MOSFET and N-type bottom BJT, it is a bipolar device, combining the high input resistance of MOSFET and the low saturation voltage drop of BJT, using the forward bias voltage added to the PN junction to make it on, when the control voltage is removed, the IGBT automatically shut down.
In contrast, the IGCT structure is more complex, it is composed of two PNP-type bipolar transistors, so the area is larger. IGCT has better reverse blocking ability and can realize bidirectional switching, while IGBT requires an external reverse parallel diode to achieve reverse blocking.
In summary, there is no IGBT in the IGCT series, they are two independent power semiconductor devices, each with unique characteristics and application areas. Choosing whether to use IGCT or IGBT needs to be determined according to the specific circuit structure and application requirements.

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